Manufacturer Part Number
SI2323DS-T1
Manufacturer
Vishay / Siliconix
Introduction
The SI2323DS-T1 is a P-channel MOSFET transistor from Vishay/Siliconix's TrenchFET series.
Product Features and Performance
MOSFET (Metal Oxide) technology
P-Channel FET type
Drain to Source Voltage (Vdss) of 20V
Maximum Gate-Source Voltage (Vgs) of ±8V
On-Resistance (Rds(on)) of 39mOhm @ 4.7A, 4.5V
Continuous Drain Current (Id) of 3.7A at 25°C
Input Capacitance (Ciss) of 1020pF @ 10V
Maximum Power Dissipation of 750mW at 25°C
Operating Temperature range of -55°C to 150°C
Product Advantages
Low on-resistance for efficient power switching
High current handling capability
Compact SOT-23-3 (TO-236) surface mount package
Suitable for a wide range of applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 20V
Gate-Source Voltage (Vgs): ±8V
On-Resistance (Rds(on)): 39mOhm @ 4.7A, 4.5V
Continuous Drain Current (Id): 3.7A at 25°C
Input Capacitance (Ciss): 1020pF @ 10V
Power Dissipation (Max): 750mW at 25°C
Quality and Safety Features
RoHS3 compliant
Suitable for reflow soldering in a Tape & Reel package
Compatibility
Compatible with a wide range of electronic circuits and systems
Application Areas
Suitable for use in power management, switching, and control applications
Commonly used in consumer electronics, industrial equipment, and automotive electronics
Product Lifecycle
Currently in active production
Replacement or upgrade options available for this product
Several Key Reasons to Choose This Product
Excellent power efficiency due to low on-resistance
High current handling capability for demanding applications
Compact and space-saving SOT-23-3 (TO-236) package
Wide operating temperature range for versatile use
RoHS3 compliance for environmental sustainability
Availability in Tape & Reel packaging for automated assembly