SI2324DS-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI2324DS-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

N-Channel TrenchFET MOSFET with low on-resistance and high power density in a space-saving SOT-23-3 package.

Product Features and Performance

Optimized for low on-resistance and high power density

Very low gate charge for high-speed switching

Suitable for high-frequency, high-efficiency power conversion applications

Robust and reliable design

Product Advantages

Compact SOT-23-3 package

Excellent thermal performance

High power density

High efficiency

Key Technical Parameters

Drain to Source Voltage (Vdss): 100 V

Gate-Source Voltage (Vgs): ±20 V

On-Resistance (Rds(on)): 234 mΩ @ 1.5 A, 10 V

Continuous Drain Current (Id): 2.3 A @ 25°C

Input Capacitance (Ciss): 190 pF @ 50 V

Power Dissipation (Max): 1.25 W (Ta), 2.5 W (Tc)

Operating Temperature: -55°C to 150°C (TJ)

Quality and Safety Features

RoHS3 compliant

Robust and reliable design

Tested and qualified for harsh environments

Compatibility

Suitable for a wide range of power conversion applications, including:

Switch-mode power supplies

DC-DC converters

Motor drives

Lighting ballasts

Industrial and consumer electronics

Application Areas

High-frequency, high-efficiency power conversion

Power management in industrial and consumer electronics

Switching applications in various power systems

Product Lifecycle

This product is currently in production and actively supported by the manufacturer. Replacement or upgrade options may be available as technology advances.

Key Reasons to Choose This Product

Compact and space-saving SOT-23-3 package

Excellent thermal performance and high power density

Low on-resistance and high efficiency for improved system performance

Robust and reliable design for use in harsh environments

Suitable for a wide range of power conversion applications