Manufacturer Part Number
SI2323DS-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
This product is a discrete semiconductor component, specifically a P-channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor).
Product Features and Performance
Trench MOSFET technology
Low on-resistance (Rds(on)) of 39 mΩ
Continuous drain current (Id) of 3.7 A at 25°C
Operating temperature range of -55°C to 150°C
Input capacitance (Ciss) of 1020 pF at 10 V
Power dissipation of 750 mW
Product Advantages
Efficient power switching and control
Compact surface-mount packaging
Wide operating temperature range
Suitable for various power management and control applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 20 V
Gate-Source Voltage (Vgs) (Max): ±8 V
Threshold Voltage (Vgs(th)) (Max): 1 V at 250 μA
Drive Voltage (Max Rds(on), Min Rds(on)): 1.8 V, 4.5 V
Gate Charge (Qg) (Max): 19 nC at 4.5 V
Quality and Safety Features
RoHS3 compliant
Suitable for various surface-mount packages (SOT-23-3)
Compatibility
Compatible with various power management and control circuits
Application Areas
Power management
Motor control
Switching circuits
Amplifier circuits
General-purpose power switching
Product Lifecycle
This product is an active and widely available component.
Replacement or upgraded versions may become available in the future.
Key Reasons to Choose This Product
Efficient power switching and control capabilities
Compact and versatile surface-mount packaging
Wide operating temperature range for various applications
Low on-resistance for improved energy efficiency
Suitable for various power management and control applications