SI2323DDS-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI2323DDS-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Product - Transistors - FETs, MOSFETs - Single

Product Features and Performance

ROHS3 Compliant

SOT-23 Package

TrenchFET Series

P-Channel MOSFET

Drain to Source Voltage (Vdss): 20V

Vgs (Max): ±8V

Rds On (Max) @ Id, Vgs: 39mOhm @ 4.1A, 4.5V

Current Continuous Drain (Id) @ 25°C: 5.3A (Tc)

Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 10 V

Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)

Vgs(th) (Max) @ Id: 1V @ 250A

Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V

Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 8 V

Product Advantages

Wide Drain to Source Voltage Range

Low On-Resistance

High Current Handling Capability

Compact SOT-23 Package

Key Technical Parameters

Drain to Source Voltage (Vdss): 20V

Vgs (Max): ±8V

Rds On (Max) @ Id, Vgs: 39mOhm @ 4.1A, 4.5V

Current Continuous Drain (Id) @ 25°C: 5.3A (Tc)

Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 10 V

Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)

Quality and Safety Features

ROHS3 Compliant

Compatibility

Surface Mount Mounting Type

Application Areas

General Purpose Power Switching

Motor Control

Power Management

Product Lifecycle

Current product, no discontinuation planned

Replacements and upgrades available

Key Reasons to Choose

Wide Drain to Source Voltage Range

Low On-Resistance

High Current Handling Capability

Compact SOT-23 Package

ROHS3 Compliant

Surface Mount Compatibility