Manufacturer Part Number
SI2325DS-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
Vishay's SI2325DS-T1-E3 is a P-Channel MOSFET transistor designed for use in a variety of power management applications.
Product Features and Performance
Trench MOSFET technology
Low on-resistance
High voltage rating of 150V
Low input capacitance
High power dissipation capability
Product Advantages
Efficient power conversion
Robust design
Compact surface mount package
Suitable for high-voltage applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 150V
Gate-Source Voltage (Vgs Max): ±20V
On-Resistance (Rds(on) Max): 1.2Ω @ 500mA, 10V
Continuous Drain Current (Id): 530mA @ 25°C
Input Capacitance (Ciss Max): 510pF @ 25V
Power Dissipation (Max): 750mW
Quality and Safety Features
RoHS3 compliant
Meets environmental standards
Compatibility
Suitable for surface mount applications
Compatible with standard MOSFET drivers and control circuits
Application Areas
Power management circuits
DC-DC converters
Motor control
LED drivers
Battery charging and protection circuits
Product Lifecycle
This product is currently in production
Replacement or upgrade options available from Vishay
Key Reasons to Choose This Product
Excellent power handling capabilities
Low on-resistance for efficient power conversion
Robust and compact design
Suitable for high-voltage applications
Proven Vishay quality and reliability