SI2328DS-T1-BE3 - Vishay Siliconix

Manufacturer Part Number

SI2328DS-T1-BE3

Manufacturer

Vishay / Siliconix

Introduction

N-Channel MOSFET Transistor

Product Features and Performance

Voltage Rating: 100 V

Maximum Gate-Source Voltage: ±20 V

On-Resistance (Rds(on)): 250 mΩ @ 1.5 A, 10 V

Continuous Drain Current (Id): 1.15 A @ 25°C

Power Dissipation: 730 mW

Gate Charge (Qg): 5 nC @ 10 V

Product Advantages

High voltage rating

Low on-resistance

Surface mount package

Key Technical Parameters

Drain-Source Voltage (Vdss): 100 V

Gate-Source Voltage (Vgs): ±20 V

On-Resistance (Rds(on)): 250 mΩ @ 1.5 A, 10 V

Continuous Drain Current (Id): 1.15 A @ 25°C

Power Dissipation: 730 mW

Gate Charge (Qg): 5 nC @ 10 V

Quality and Safety Features

Operating Temperature Range: -55°C to 150°C

Compliant with RoHS directive

Compatibility

Surface mount package (SOT-23-3)

Suitable for replacing similar N-channel MOSFET transistors

Application Areas

General-purpose switching and amplifying applications

Power supplies, motor drives, and other power electronics

Product Lifecycle

Current product, no indication of discontinuation

Replacements and upgrades available from Vishay/Siliconix

Key Reasons to Choose This Product

High voltage rating and low on-resistance for efficient power switching

Small surface mount package for compact designs

Proven reliability and quality from Vishay/Siliconix

Availability of replacement and upgrade options