Manufacturer Part Number
SI2333CDS-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
P-Channel Trench MOSFET Transistor
Product Features and Performance
Low on-resistance for high efficiency
Fast switching speed
High power handling capability
High temperature operation up to 150°C
Low gate charge for efficient switching
Product Advantages
Excellent power efficiency
Reliable performance in high-temperature environments
Compact and space-saving design
Efficient switching for power conversion applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 12V
Maximum Gate-Source Voltage (Vgs): ±8V
On-Resistance (Rds(on)): 35mΩ @ 5.1A, 4.5V
Continuous Drain Current (Id): 7.1A @ 25°C
Input Capacitance (Ciss): 1225pF @ 6V
Power Dissipation: 1.25W (Ta), 2.5W (Tc)
Quality and Safety Features
RoHS3 compliant
Reliable and durable construction
Meets safety and quality standards
Compatibility
Compatible with a wide range of electronic circuits and systems
Application Areas
Power supplies
DC-DC converters
Motor drives
Lighting and LED drivers
Battery management systems
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacement and upgrade options available
Key Reasons to Choose This Product
Excellent power efficiency and thermal performance
Fast switching speed for efficient power conversion
Compact and space-saving design
Reliable and durable construction for long-term use
Compatibility with a wide range of applications
Si2333DDST1-GE3Electro-Films (EFI) / Vishay
SI2333YQ