SI2337DS-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI2337DS-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

The SI2337DS-T1-E3 is a P-Channel enhancement mode MOSFET transistor from Vishay/Siliconix. It is part of the TrenchFET series and is designed for a variety of power management and switching applications.

Product Features and Performance

80V Drain-Source Voltage (Vds)

2A Continuous Drain Current (Id) at 25°C

270mΩ Maximum On-Resistance (Rds(on)) at 1.2A, 10V

Low Input Capacitance (Ciss) of 500pF at 40V

Wide Operating Temperature Range of -50°C to 150°C

Product Advantages

Efficient power management with low on-resistance

Suitable for high-voltage applications

Compact SOT-23-3 surface mount package

RoHS compliant and lead-free

Key Technical Parameters

Drain-Source Voltage (Vds): 80V

Gate-Source Voltage (Vgs): ±20V

On-Resistance (Rds(on)): 270mΩ @ 1.2A, 10V

Continuous Drain Current (Id): 2.2A at 25°C

Input Capacitance (Ciss): 500pF @ 40V

Quality and Safety Features

RoHS3 compliant

Designed for reliable operation in harsh environments

Compatibility

This MOSFET is suitable for a wide range of power management and switching applications, including DC-DC converters, motor drives, and power supplies.

Application Areas

Power management

Motor drives

Switching power supplies

Industrial and consumer electronics

Product Lifecycle

The SI2337DS-T1-E3 is an active product, and Vishay/Siliconix continues to manufacture and support it. Replacement or upgrade options may be available from Vishay/Siliconix or other manufacturers.

Key Reasons to Choose This Product

Efficient power management with low on-resistance

Suitable for high-voltage applications

Compact surface mount package

Wide operating temperature range

RoHS compliance and lead-free design

Proven reliability and performance from a trusted manufacturer