Manufacturer Part Number
STW6N90K5
Manufacturer
STMicroelectronics
Introduction
High-voltage, high-performance N-channel MOSFET with low on-resistance and high reliability for industrial and consumer applications
Product Features and Performance
900V drain-to-source voltage
1Ω maximum on-resistance at 3A, 10V
6A continuous drain current at 25°C case temperature
110W maximum power dissipation
-55°C to 150°C operating temperature range
Fast switching capability
Product Advantages
Improved efficiency and reduced energy consumption
Reliable and robust performance
Suitable for a wide range of high-voltage applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 900V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 1.1Ω @ 3A, 10V
Continuous Drain Current (Id): 6A @ 25°C
Power Dissipation (Pd): 110W @ 25°C
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Suitable for a wide range of high-voltage, high-power industrial and consumer applications
Application Areas
Switch-mode power supplies
Motor drives
Inductive lighting ballasts
High-voltage industrial and consumer electronics
Product Lifecycle
Currently in active production
Available replacements and upgrades may be introduced in the future
Key Reasons to Choose This Product
High-voltage and high-current capability
Low on-resistance for improved efficiency
Robust and reliable performance across wide temperature range
Suitable for a diverse range of high-power applications
Manufactured to high quality and safety standards