STW6N120K3 - STMicroelectronics

Manufacturer Part Number

STW6N120K3

Manufacturer

STMicroelectronics

Introduction

High-performance N-Channel MOSFET with SuperMESH3 technology for power conversion applications

Product Features and Performance

High Drain-Source Voltage: 1200V

Low On-Resistance: 2.4Ω @ 2.5A, 10V

High Continuous Drain Current: 6A @ 25°C

Wide Operating Temperature Range: -55°C to 150°C

Low Input Capacitance: 1050pF @ 100V

High Power Dissipation: 150W

Product Advantages

Excellent switching performance for high-efficiency power conversion

Robust design with high voltage and current handling capabilities

Compact TO-247-3 package for space-efficient board layout

Key Technical Parameters

Drain-Source Voltage (Vdss): 1200V

Gate-Source Voltage (Vgs): ±30V

On-Resistance (Rds(on)): 2.4Ω @ 2.5A, 10V

Continuous Drain Current (Id): 6A @ 25°C

Input Capacitance (Ciss): 1050pF @ 100V

Power Dissipation (Ptot): 150W

Quality and Safety Features

ROHS3 Compliant

Designed and manufactured to high quality standards

Compatibility

Compatible with various power conversion applications, such as:

- Switch-mode power supplies

- Motor drives

- Inverters

- Uninterruptible power supplies (UPS)

Application Areas

Industrial, commercial, and consumer power electronics

Renewable energy systems

Appliances and white goods

Automotive electronics

Product Lifecycle

This product is currently in production and is not nearing discontinuation.

Replacements and upgrades may be available in the future as technology advances.

Key Reasons to Choose This Product

Excellent switching performance for high-efficiency power conversion

Robust design with high voltage and current handling capabilities

Compact and space-efficient TO-247-3 package

Designed and manufactured to high quality standards

Versatile compatibility with various power conversion applications

Long product lifecycle and potential for future replacements/upgrades