Manufacturer Part Number
STW68N60M6
Manufacturer
STMicroelectronics
Introduction
High performance N-Channel power MOSFET in TO-247-3 package
Part of the MDmesh M6 series
Product Features and Performance
Wide operating temperature range of -55°C to 150°C
High drain to source voltage of 600V
Low on-resistance of 41mΩ at 31.5A, 10V
Continuous drain current of 63A at 25°C
Product Advantages
Excellent high-frequency switching performance
High power density
High efficiency
Robust and reliable design
Key Technical Parameters
Drain to Source Voltage (Vdss): 600V
Gate to Source Voltage (Vgs): ±25V
Drain Current (Id): 63A
On-Resistance (Rds(on)): 41mΩ
Input Capacitance (Ciss): 4360pF
Power Dissipation (Ptot): 390W
Quality and Safety Features
RoHS3 compliant
Suitable for high-voltage, high-current applications
Proven reliability and quality from STMicroelectronics
Compatibility
Compatible with similar TO-247-3 packages
Suitable for a variety of power electronics applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Industrial and medical equipment
Product Lifecycle
Currently in production
No known discontinuation plans
Compatible replacements and upgrades available from STMicroelectronics
Key Reasons to Choose
High performance and efficiency
Robust and reliable design
Wide operating temperature range
Cost-effective solution for high-voltage, high-current applications
STW65N60DM6STMicroelectronicsMOSFET N-CH 600V 38A TO247