Manufacturer Part Number
STW63N65DM2
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET
Product Features and Performance
650V drain-to-source voltage
Low on-state resistance (50mΩ max at 30A, 10V)
High continuous drain current (60A at 25°C)
Wide operating temperature range (-55°C to 150°C)
Fast switching speed
Low gate charge (120nC max at 10V)
Product Advantages
Excellent power efficiency
High reliability
Suitable for high-power switching applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 650V
Gate-to-Source Voltage (Vgs): ±25V
Drain Current (Id): 60A (at 25°C)
On-State Resistance (Rds(on)): 50mΩ max (at 30A, 10V)
Input Capacitance (Ciss): 5500pF max (at 100V)
Power Dissipation (Pd): 446W (at Tc)
Gate Charge (Qg): 120nC max (at 10V)
Quality and Safety Features
RoHS3 compliant
Stringent quality control measures
Compatibility
Through-hole mounting (TO-247-3 package)
Suitable for a wide range of power electronics applications
Application Areas
Switching power supplies
Motor drives
Industrial inverters
Welding equipment
Solar inverters
Product Lifecycle
Current production model, no discontinuation planned
Replacement or upgrade options available if required
Key Reasons to Choose This Product
Excellent power efficiency and performance
Reliable and durable design
Wide operating temperature range
Suitable for high-power switching applications
RoHS3 compliance for environmental safety
Availability of replacement or upgrade options