Manufacturer Part Number
STW69N65M5
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel MOSFET with MDmesh V technology for high-voltage power conversion applications
Product Features and Performance
Optimized for high-voltage power conversion applications
Improved figure of merit (RDS(on) Qg) for increased efficiency
Low on-state resistance
High-speed switching capabilities
Robust and reliable design
Product Advantages
Excellent power efficiency
High-voltage operation
Fast switching
Reliable performance
Key Technical Parameters
Drain to Source Voltage (Vdss): 650 V
Maximum Gate-Source Voltage (Vgs(max)): ±25 V
On-State Resistance (RDS(on)): 45 mΩ @ 29 A, 10 V
Continuous Drain Current (ID): 58 A @ 25°C
Input Capacitance (Ciss): 6420 pF @ 100 V
Power Dissipation (Tc): 330 W
Quality and Safety Features
RoHS3 compliant
Robust TO-247-3 package
Compatibility
Through-hole mounting
Compatible with high-voltage power conversion applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Welding equipment
Industrial automation
Product Lifecycle
Current product offering
No indication of discontinuation
Replacement or upgrade options may be available
Key Reasons to Choose This Product
Excellent power efficiency and high-voltage operation
Fast switching and low on-state resistance
Reliable and robust design for demanding applications
Compatibility with a wide range of high-voltage power conversion systems
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