Manufacturer Part Number
STW65N60DM6
Manufacturer
STMicroelectronics
Introduction
The STW65N60DM6 is a high-performance N-channel MOSFET transistor designed for various power electronics applications.
Product Features and Performance
High breakdown voltage of 600V
Low on-resistance of 0.065Ω
High continuous drain current of 38A at 25°C
Fast switching speed and low gate charge
Suitable for hard and soft switching applications
Robust design with high ruggedness
Product Advantages
Excellent power conversion efficiency
Reduced system size and weight
Improved system reliability and durability
Versatile for a wide range of power conversion applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Gate-to-Source Voltage (Vgs): ±25V
Continuous Drain Current (Id) @ 25°C: 38A
On-Resistance (RDS(on)): 0.065Ω
Total Gate Charge (Qg): 100nC
Quality and Safety Features
Compliant with RoHS 3 directive
Reliable and robust design for industrial applications
Tested and qualified for high-quality standards
Compatibility
Suitable for use in various power electronic circuits and systems
Compatible with common gate drive circuits and control schemes
Application Areas
Switch-mode power supplies (SMPS)
Motor drives
Inverters
UPS systems
Industrial automation and control equipment
Product Lifecycle
This product is currently in production and widely available
Suitable replacement and upgrade options are readily available from the manufacturer
Key Reasons to Choose This Product
Excellent power handling capability and efficiency
Robust and reliable design for industrial applications
Wide range of compatible applications and system integration
Availability of technical support and long-term product supply from the manufacturer
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