Manufacturer Part Number
STW62NM60N
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET in TO-247-3 package
Product Features and Performance
600V drain-source voltage
65A continuous drain current
49mΩ maximum on-resistance
5800pF maximum input capacitance
174nC maximum gate charge
450W maximum power dissipation
Suitable for high-frequency and high-efficiency switching applications
Product Advantages
Low on-resistance for high efficiency
Fast switching speed
High voltage and current handling capability
Robust design for reliable operation
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 49mΩ
Continuous Drain Current (Id): 65A
Input Capacitance (Ciss): 5800pF
Power Dissipation (Ptot): 450W
Quality and Safety Features
RoHS3 compliant
Suitable for high-temperature operation up to 150°C
Compatibility
Compatible with various high-frequency, high-power switching applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Uninterruptible power supplies (UPS)
Welding equipment
Product Lifecycle
This product is currently in production and not nearing discontinuation
Replacements and upgrades may be available in the future
Several Key Reasons to Choose This Product
High voltage and current capability for demanding applications
Low on-resistance for efficient power conversion
Fast switching speed for high-frequency operation
Robust design and high reliability
RoHS3 compliance for environmentally-friendly use