Manufacturer Part Number
STW65N80K5
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel MOSFET power transistor for high-voltage, high-power applications
Product Features and Performance
800V drain-to-source voltage (Vdss)
Low on-resistance (Rds(on)) of 80mΩ at 23A and 10V gate voltage
High current capability of 46A continuous drain current (Id) at 25°C case temperature
Fast switching with low gate charge (Qg) of 92nC at 10V gate voltage
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent power density and efficiency
Reliable and robust performance
Suitable for high-voltage, high-power applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 800V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 80mΩ @ 23A, 10V
Continuous Drain Current (Id): 46A @ 25°C
Input Capacitance (Ciss): 3230pF @ 100V
Power Dissipation (Tc): 446W
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Compatible with various high-voltage, high-power applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Welding equipment
Induction heating
Other high-voltage, high-power applications
Product Lifecycle
Currently in production
Replacements and upgrades available
Key Reasons to Choose This Product
High voltage and current capability
Low on-resistance for high efficiency
Fast switching for improved system performance
Wide operating temperature range
Robust and reliable design
RoHS3 compliance for environmental compatibility
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