Manufacturer Part Number
STW65N65DM2AG
Manufacturer
STMicroelectronics
Introduction
High-performance, automotive-qualified N-channel power MOSFET in TO-247-3 package
Product Features and Performance
Designed for high-voltage, high-current switching applications
650V drain-source voltage rating
60A continuous drain current at 25°C
Low on-resistance of 50mΩ at 30A, 10V
Fast switching speed
High power density
AEC-Q101 qualified for automotive applications
Product Advantages
Excellent thermal performance
Robust and reliable design
Optimized for high-efficiency power conversion
Suitable for high-voltage, high-current switching applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 650V
Gate-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 50mΩ @ 30A, 10V
Drain Current (Id): 60A (Tc)
Input Capacitance (Ciss): 5500pF @ 100V
Power Dissipation (Pd): 446W (Tc)
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified for automotive applications
Proven reliability and quality
Compatibility
Suitable for a wide range of high-voltage, high-current switching applications, such as:
Power supplies
Motor drives
Inverters
Power converters
Application Areas
Automotive electronics
Industrial equipment
Renewable energy systems
Consumer electronics
Product Lifecycle
This product is currently in production and is not nearing discontinuation. Replacement or upgrade options may be available from the manufacturer.
Key Reasons to Choose This Product
High performance and reliability for demanding applications
Optimized for high-efficiency power conversion
Automotive-qualified design for reliable operation in harsh environments
Robust and durable construction
Excellent thermal management capabilities
Wide range of compatibility and applications
STW65N60DM6STMicroelectronicsMOSFET N-CH 600V 38A TO247