Manufacturer Part Number
STW70N60DM2
Manufacturer
STMicroelectronics
Introduction
High-performance N-Channel MOSFET with low on-resistance and fast switching
Product Features and Performance
Low on-resistance of 42mOhm @ 33A, 10V
High drain-to-source voltage of 600V
Wide operating temperature range of -55°C to 150°C
Fast switching with low gate charge of 121nC @ 10V
High continuous drain current of 66A @ 25°C
Product Advantages
Excellent power efficiency
Reliable high-voltage operation
Wide temperature range suitability
Fast and efficient switching
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Maximum Gate-to-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 42mOhm
Continuous Drain Current (Id): 66A
Input Capacitance (Ciss): 5508pF
Power Dissipation (Tc): 446W
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
TO-247-3 package
Suitable for a variety of power conversion and control applications
Application Areas
Switched-mode power supplies
Motor drives
Inverters
Uninterruptible power supplies (UPS)
Product Lifecycle
Current production model
Replacement or upgrade options available from STMicroelectronics
Key Reasons to Choose This Product
Excellent power efficiency and performance
Reliable high-voltage operation
Wide temperature range suitability
Fast and efficient switching
Robust design and quality manufacturing