Manufacturer Part Number
STW70N60M2-4
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel MOSFET transistor with very low on-resistance and high power handling capability
Product Features and Performance
Operates at high voltages up to 600V
Extremely low on-resistance of just 40 milliohms
Continuous drain current up to 68A at 25°C
Wide operating temperature range of -55°C to 150°C
Low gate charge of 118 nC for efficient switching
Robust TO-247-4 package with high power dissipation of 450W
Product Advantages
Excellent performance for high-power, high-efficiency applications
Highly reliable and durable design
Easy to integrate and implement
Key Technical Parameters
Drain to Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs, max): ±25V
On-Resistance (Rds(on), max): 40 milliohms
Continuous Drain Current (Id, at 25°C): 68A
Input Capacitance (Ciss, max): 5200 pF
Power Dissipation (Ptot, max): 450W
Quality and Safety Features
RoHS 3 compliant
Robust TO-247-4 metal package for high reliability and thermal performance
Tested and qualified to industrial standards
Compatibility
Standard through-hole TO-247-4 package
Suitable for a wide range of high-power, high-efficiency applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Welding equipment
Industrial automation and control systems
Product Lifecycle
Current production product, no plans for discontinuation
Replacement and upgrade options available from STMicroelectronics
Key Reasons to Choose
Excellent performance and efficiency for high-power applications
Highly reliable and durable design
Easy integration and implementation
Broad compatibility and suitability for various industrial applications
Continuous availability and upgrade options from a trusted manufacturer