Manufacturer Part Number
STW75N60M6
Manufacturer
STMicroelectronics
Introduction
High-performance, high-power N-channel power MOSFET in TO-247-3 package
Product Features and Performance
600V drain-source voltage rating
Low on-resistance (36mOhm max at 36A, 10V)
High continuous drain current (72A at 25°C)
Wide operating temperature range (-55°C to 150°C)
Low input capacitance (4,850pF max at 100V)
High power dissipation (446W max at Tc)
Fast switching capability
Product Advantages
Excellent power handling and efficiency
Reliable performance in high-power applications
Compact and easy to integrate design
Key Technical Parameters
Drain-source voltage (Vdss): 600V
Gate-source voltage (Vgs): ±25V
Continuous drain current (Id): 72A at 25°C
On-resistance (Rds(on)): 36mOhm max at 36A, 10V
Input capacitance (Ciss): 4,850pF max at 100V
Power dissipation (Pd): 446W max at Tc
Quality and Safety Features
RoHS3 compliant
Robust TO-247-3 package for reliable operation
Compatibility
Suitable for high-power, high-voltage applications such as power supplies, motor drives, and industrial electronics
Application Areas
Power supplies
Motor drives
Industrial electronics
Renewable energy systems
Welding equipment
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacement or upgrade options may be available from STMicroelectronics
Key Reasons to Choose
Excellent power handling and efficiency
Reliable performance in high-power applications
Wide operating temperature range
Compact and easy to integrate design
RoHS3 compliance for environmentally-conscious applications
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STW75N60DM6STMicroelectronicsMOSFET N-CH 600V 72A TO247