Manufacturer Part Number
STW77N65M5
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel MOSFET with low on-resistance and high drain-source voltage
Product Features and Performance
650V drain-source voltage
Low on-resistance of 38mΩ
Continuous drain current of 69A at 25°C
Input capacitance of 9800pF
Power dissipation up to 400W
Fast switching and low gate charge
Product Advantages
Excellent energy efficiency
Robust and reliable performance
Compact and easy to integrate
Key Technical Parameters
Vds: 650V
Vgs (max): 25V
Rds(on) (max): 38mΩ
Id (cont): 69A
Ciss: 9800pF
Pd (max): 400W
FET type: N-channel MOSFET
Quality and Safety Features
ROHS3 compliant
TO-247-3 package
Compatibility
Compatible with a wide range of power electronics applications
Application Areas
Power conversion
Motor drives
Inverters
Switched-mode power supplies
Product Lifecycle
Current production model
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Excellent performance in terms of low on-resistance, high voltage handling, and high current capability
Compact and easy to integrate into power electronics designs
Robust and reliable operation, even in harsh environments
Contributes to improved energy efficiency in power conversion systems