Manufacturer Part Number
STW56NM60N
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET
Part of the MDmesh II series
Product Features and Performance
600V drain-source voltage
45A continuous drain current at 25°C
60mΩ maximum on-resistance
4800pF maximum input capacitance
300W maximum power dissipation
Product Advantages
Low on-resistance for high efficiency
Fast switching for high-frequency applications
Robust design for reliable operation
Key Technical Parameters
Drain-source voltage: 600V
Gate-source voltage: ±25V
On-resistance: 60mΩ max
Drain current: 45A max at 25°C
Operating temperature: 150°C max
Quality and Safety Features
RoHS3 compliant
TO-247-3 package for good thermal performance
Compatibility
Compatible with various power electronic applications
Application Areas
Switching power supplies
Motor drives
Industrial automation and control
Solar inverters
Product Lifecycle
This product is currently available and not nearing discontinuation
Replacements and upgrades are available within the MDmesh II series
Key Reasons to Choose This Product
Excellent power efficiency due to low on-resistance
Reliable and robust design for demanding applications
Compatibility with a wide range of power electronic systems
Availability of replacements and upgrades within the product series