STW56N60DM2 - STMicroelectronics

Manufacturer Part Number

STW56N60DM2

Manufacturer

STMicroelectronics

Introduction

High-performance power MOSFET transistor designed for high-power switching applications

Product Features and Performance

N-channel MOSFET with a drain-to-source voltage rating of 600V

Optimized for high-efficiency, high-frequency power conversion

Low on-resistance and fast switching capabilities

Excellent thermal management and high power handling capabilities

Product Advantages

Robust and reliable power switching performance

Efficient power conversion for high-power applications

Compact and space-saving design

Suitable for a wide range of operating temperatures

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 600V

Gate-to-Source Voltage (Vgs): ±25V

On-Resistance (Rds(on)): 60mΩ @ 25A, 10V

Continuous Drain Current (Id): 50A @ 25°C

Input Capacitance (Ciss): 4100pF @ 100V

Power Dissipation (Tc): 360W

Quality and Safety Features

ROHS3 compliant

Designed and manufactured to high quality standards

Compatibility

Suitable for a wide range of high-power switching applications

Application Areas

Switched-mode power supplies (SMPS)

Motor drives

Inverters

Welding equipment

Industrial and consumer electronics

Product Lifecycle

This product is currently in production and widely available

Upgrades and replacements may be available in the future as technology evolves

Key Reasons to Choose This Product

Excellent power handling and efficiency for high-power switching applications

Robust and reliable performance across a wide temperature range

Optimized for high-frequency operation and efficient power conversion

Compact and space-saving design for easy integration into various systems

Manufactured to high quality standards and RoHS compliant