Manufacturer Part Number
STW56N60M2
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET in a TO-247-3 package
Suitable for use in high-voltage, high-power applications
Product Features and Performance
Breakdown voltage of 600 V
Drain-source on-resistance of 55 mΩ at 26 A, 10 V
Continuous drain current of 52 A at 25°C
Maximum operating junction temperature of 150°C
Input capacitance of 3,750 pF at 100 V
Power dissipation of 350 W at 25°C
Product Advantages
Excellent performance-to-cost ratio
Robust design for high reliability
Suitable for high-voltage, high-power applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 600 V
Gate-Source Voltage (Vgs): ±25 V
Drain-Source On-Resistance (Rds(on)): 55 mΩ @ 26 A, 10 V
Continuous Drain Current (Id): 52 A @ 25°C
Input Capacitance (Ciss): 3,750 pF @ 100 V
Quality and Safety Features
RoHS3 compliant
Robust design for high reliability
Compatibility
Compatible with a wide range of high-power, high-voltage applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Welding equipment
Industrial automation and control
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacement or upgrade parts available
Key Reasons to Choose This Product
Excellent performance-to-cost ratio
Robust and reliable design
Suitable for high-voltage, high-power applications
Wide range of compatible applications