Manufacturer Part Number
STW56N65DM2
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET with MDmesh DM2 technology
Suitable for high-voltage, high-power switching applications
Product Features and Performance
Drain-Source Voltage (Vdss): 650V
Continuous Drain Current (Id): 48A @ 25°C
On-Resistance (Rds(on)): 65mΩ @ 24A, 10V
Input Capacitance (Ciss): 4100pF @ 100V
Power Dissipation (Tc): 360W
Wide Operating Temperature Range: -55°C to 150°C
Product Advantages
Excellent performance and efficiency
High voltage and current capabilities
Low on-resistance for reduced power losses
Suitable for high-frequency switching applications
Key Technical Parameters
N-channel MOSFET
TO-247-3 package
ROHS3 compliant
Quality and Safety Features
Robust and reliable design
Designed to meet safety and regulatory requirements
Compatibility
Suitable for a wide range of high-power, high-voltage switching applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
Currently available
No discontinuation or replacement plans announced
Key Reasons to Choose This Product
High performance and efficiency
Excellent voltage and current capabilities
Low on-resistance for improved energy efficiency
Robust and reliable design
Suitable for a wide range of high-power applications
STW55NM50STMicroelectronics