Manufacturer Part Number
STW56N65M2
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET with MDmesh M2 technology
Product Features and Performance
High-voltage capability up to 650V
Low on-resistance down to 62mOhm
Continuous drain current up to 49A at 25°C
High switching speed and low gate charge
Suitable for high-frequency switched-mode power conversion applications
Product Advantages
Improved efficiency through low conduction and switching losses
Reduced system size and weight through high-frequency operation
Reliable and robust design for demanding applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 650V
Gate-to-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 62mOhm @ 24.5A, 10V
Continuous Drain Current (ID): 49A @ 25°C
Input Capacitance (Ciss): 3900pF @ 100V
Power Dissipation (Ptot): 358W @ 25°C
Quality and Safety Features
RoHS 3 compliant
TO-247-3 package for through-hole mounting
Designed and manufactured to high reliability standards
Compatibility
Compatible with a wide range of power conversion and control applications
Application Areas
Switched-mode power supplies
Motor drives
Inverters
Industrial automation and control equipment
Product Lifecycle
This product is currently in active production and is not nearing discontinuation. Replacement or upgrade options may be available from STMicroelectronics.
Key Reasons to Choose This Product
High voltage and current handling capability
Extremely low on-resistance for improved efficiency
Fast switching speed and low gate charge for high-frequency operation
Robust and reliable design for demanding applications
Compatibility with a wide range of power conversion and control systems
STW55NE10STMicroelectronics