Manufacturer Part Number
STW57N65M5-4
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET for industrial and consumer applications
Product Features and Performance
650V drain-source voltage
42A continuous drain current at 25°C
63mΩ maximum on-resistance
2nF maximum input capacitance
98nC maximum gate charge
250W maximum power dissipation
-55°C to 150°C operating temperature range
Product Advantages
High breakdown voltage
Low on-resistance
Fast switching speed
High power density
Reliable and robust design
Key Technical Parameters
Drain-Source Voltage (Vdss): 650V
Gate-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 63mΩ @ 21A, 10V
Drain Current (Id): 42A @ 25°C
Input Capacitance (Ciss): 4200pF @ 100V
Power Dissipation (Ptot): 250W @ 25°C
Quality and Safety Features
RoHS3 compliant
TO-247-4L package for high thermal conductivity
Designed and manufactured to high quality standards
Compatibility
Suitable for a wide range of industrial and consumer power electronics applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Welding equipment
Industrial automation
Product Lifecycle
Current production model
Replacements and upgrades available as technology evolves
Key Reasons to Choose This Product
High efficiency and power density
Robust and reliable performance
Proven track record in industrial and consumer applications
Wide operating temperature range
Easy integration into power electronics systems
