Manufacturer Part Number
STW58N65DM2AG
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel MOSFET transistor designed for automotive and industrial applications
Product Features and Performance
Supports high drain-source voltage up to 650V
Low on-resistance down to 65mΩ
Fast switching capabilities with low gate charge of 88nC
Optimized for efficiency in high-power circuits
Automotive-grade AEC-Q101 qualified
Product Advantages
Excellent power handling and thermal management
Robust design for demanding environments
Efficient performance for power conversion applications
Compatibility with automotive and industrial standards
Key Technical Parameters
Drain-Source Voltage (Vdss): 650V
Gate-Source Voltage (Vgs): ±25V
Continuous Drain Current (Id): 48A
On-Resistance (Rds(on)): 65mΩ
Input Capacitance (Ciss): 4100pF
Power Dissipation (Tc): 360W
Operating Temperature: -55°C to 150°C
Quality and Safety Features
RoHS3 compliant
Automotive-grade AEC-Q101 qualified
Reliable performance in harsh environments
Compatibility
Compatible with various automotive and industrial power conversion applications
Application Areas
Switching power supplies
Motor drives
Inverters
Electric vehicle systems
Industrial automation and control
Product Lifecycle
Currently available
No information on discontinuation or replacements
Several Key Reasons to Choose This Product
High voltage and current handling capabilities
Excellent efficiency and thermal performance
Robust automotive-grade qualification
Versatile compatibility across applications
Reliable operation in demanding conditions