Manufacturer Part Number
STW58N60DM2AG
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel MOSFET suitable for automotive and industrial applications
Product Features and Performance
600V drain-source voltage
50A continuous drain current at 25°C
Low on-resistance of 60mΩ at 10V gate-source voltage
Wide operating temperature range of -55°C to 150°C
Fast switching speed and low gate charge of 90nC at 10V
Product Advantages
Excellent power efficiency
High power density
Reliable automotive-grade performance
Suitable for high-voltage, high-current applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 60mΩ at 25A, 10V
Continuous Drain Current (Id): 50A at 25°C
Input Capacitance (Ciss): 4100pF at 100V
Power Dissipation (Ptot): 360W at Tc
Quality and Safety Features
AEC-Q101 qualified for automotive applications
RoHS3 compliant
Compatibility
TO-247-3 package
Suitable for high-power, high-voltage switching applications
Application Areas
Automotive electronics (e.g., motor drives, power converters)
Industrial power electronics (e.g., power supplies, inverters)
Renewable energy systems (e.g., solar, wind)
Product Lifecycle
Currently in production
No plans for discontinuation
Replacements and upgrades available
Key Reasons to Choose
Excellent power efficiency and high power density
Reliable automotive-grade performance
Wide operating temperature range
Suitable for high-voltage, high-current applications
AEC-Q101 qualified and RoHS3 compliant
