Manufacturer Part Number
STW55NM60N
Manufacturer
STMicroelectronics
Introduction
High-performance MDmesh II N-channel power MOSFET for industrial and consumer applications
Product Features and Performance
600V N-channel power MOSFET
Low on-resistance (RDS(on)) of 60mΩ
High continuous drain current (ID) of 51A
Wide operating temperature range up to 150°C
Low input capacitance (Ciss) of 5800pF
High power dissipation capability of 350W
Product Advantages
Excellent efficiency and thermal performance
Robust and reliable design
Suitable for high-voltage, high-current applications
Key Technical Parameters
Drain-to-Source Voltage (VDS): 600V
Gate-to-Source Voltage (VGS): ±25V
On-Resistance (RDS(on)): 60mΩ @ 25.5A, 10V
Continuous Drain Current (ID): 51A @ 25°C
Input Capacitance (Ciss): 5800pF @ 50V
Power Dissipation (PD): 350W @ 25°C
Quality and Safety Features
RoHS3 compliant
Suitable for industrial and consumer applications
Compatibility
TO-247-3 package
Compatible with various industrial and consumer electronics
Application Areas
Power supplies
Motor drives
Lighting and appliance control
Welding equipment
Industrial automation
Product Lifecycle
Current product offering
No information on discontinuation or replacement models
Key Reasons to Choose This Product
Excellent efficiency and thermal performance
Robust and reliable design
Suitable for high-voltage, high-current applications
Wide operating temperature range
Low on-resistance and high current capability
RoHS3 compliant for industrial and consumer applications
STW54NM65ND MOSSTMicroelectronics