Manufacturer Part Number
STW54NM65ND
Manufacturer
STMicroelectronics
Introduction
High-performance N-Channel MOSFET
Part of the FDmesh II series
Product Features and Performance
Drain-to-Source Voltage (Vdss) of 650V
Extremely low on-resistance (Rds(on)) of 65mΩ
Continuous Drain Current (Id) of 49A at 25°C
Supports operating temperatures up to 150°C
Low gate charge (Qg) of 188nC at 10V
High power dissipation of 350W
Product Advantages
Excellent efficiency and low switching losses
Robust and reliable performance
Suitable for high-power, high-voltage applications
Key Technical Parameters
Vdss: 650V
Rds(on): 65mΩ
Id: 49A
Tj(max): 150°C
Qg: 188nC
Quality and Safety Features
RoHS3 compliant
Suitable for safety-critical applications
Compatibility
Through-hole mounting (TO-247-3 package)
Compatible with various high-voltage, high-power designs
Application Areas
Switch-mode power supplies
Motor drives
Power inverters
Induction heating
Industrial and consumer electronics
Product Lifecycle
Current product offering
No known discontinuation plans
Replacements and upgrades may be available
Key Reasons to Choose
Exceptional performance and efficiency
Reliable and robust design
Suitable for a wide range of high-power applications
Compatibility with various system designs
Compliance with industry safety and environmental standards
STW55NM50STMicroelectronics