Manufacturer Part Number
STW20NM60FD
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel MOSFET transistor with high power density and high efficiency
Product Features and Performance
600V drain-source voltage
20A continuous drain current
Low on-resistance of 290mΩ
High temperature operation up to 150°C
Fast switching with low gate charge of 37nC
Robust design with high avalanche energy rating
Product Advantages
Efficient power conversion with low conduction and switching losses
Suitable for high-power density applications
Reliable operation in harsh environments
Key Technical Parameters
Vdss: 600V
Vgs (max): ±30V
Rds(on) (max): 290mΩ @ 10A, 10V
Id (continuous): 20A @ 25°C
Ciss (max): 1300pF @ 25V
Power Dissipation (max): 214W
Quality and Safety Features
RoHS3 compliant
TO-247-3 package for reliable thermal performance
Compatibility
Through-hole mounting
Suitable for a wide range of power conversion and motor control applications
Application Areas
Switch-mode power supplies
Motor drives
Industrial automation
Renewable energy systems
Product Lifecycle
Currently in active production
Replacement options and upgrades available
Key Reasons to Choose This Product
High power density and efficiency for compact designs
Reliable operation in harsh environments
Robust design with high avalanche energy rating
Suitable for a wide range of high-power applications
Readily available with replacement options