Manufacturer Part Number
STW20NK50Z
Manufacturer
STMicroelectronics
Introduction
High-voltage, high-performance MOSFET transistor
Product Features and Performance
N-channel MOSFET
500V drain-source voltage
17A continuous drain current
270mΩ maximum on-resistance
2600pF maximum input capacitance
190W maximum power dissipation
150°C maximum junction temperature
ROHS3 compliant
Product Advantages
Efficient and reliable power switching
Suitable for high-voltage, high-power applications
Low on-resistance for low power loss
Compact TO-247-3 package
Key Technical Parameters
Drain-Source Voltage (Vdss): 500V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 270mΩ @ 8.5A, 10V
Continuous Drain Current (Id): 17A @ 25°C
Input Capacitance (Ciss): 2600pF @ 25V
Power Dissipation (Ptot): 190W @ Tc
Quality and Safety Features
ROHS3 compliant
Reliable TO-247-3 package
Compatibility
Suitable for use in high-power switching applications
Application Areas
Power supplies
Motor drives
Inverters
Welding equipment
Industrial and consumer electronics
Product Lifecycle
Currently available
No known discontinuation plans
Key Reasons to Choose
High voltage and current capability
Low on-resistance for high efficiency
Compact and reliable package
Suitable for a wide range of high-power applications
STW20NM60(W20NM60)STMicroelectronics