Manufacturer Part Number
STW20NM50
Manufacturer
STMicroelectronics
Introduction
The STW20NM50 is a high-performance N-channel power MOSFET transistor designed for a wide range of power conversion and control applications.
Product Features and Performance
550V Drain-Source Voltage (Vdss)
20A Continuous Drain Current (Id)
250mΩ Maximum On-Resistance (Rds(on))
1480pF Maximum Input Capacitance (Ciss)
214W Maximum Power Dissipation (Tc)
150°C Maximum Junction Temperature (Tj)
Product Advantages
High breakdown voltage for reliable operation
Low on-resistance for efficient power conversion
Fast switching for high-frequency applications
Robust design for reliable performance
Key Technical Parameters
Drain-Source Voltage (Vdss): 550V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 250mΩ @ 10A, 10V
Continuous Drain Current (Id): 20A (Tc)
Input Capacitance (Ciss): 1480pF @ 25V
Power Dissipation (Tc): 214W
Quality and Safety Features
RoHS3 compliant
Robust TO-247-3 package design
Compatibility
Suitable for a wide range of power conversion and control applications
Application Areas
Switching power supplies
Motor drives
Automotive electronics
Industrial control systems
Product Lifecycle
Currently in production
No plans for discontinuation
Replacement or upgrade options available from the manufacturer
Key Reasons to Choose This Product
High breakdown voltage for reliable operation
Low on-resistance for efficient power conversion
Fast switching for high-frequency applications
Robust design for reliable performance
RoHS3 compliance for environmental sustainability
Availability of replacement and upgrade options
STW20NM60(W20NM60)STMicroelectronics