Manufacturer Part Number
STW20NM50FD
Manufacturer
STMicroelectronics
Introduction
High-performance N-Channel MOSFET transistor
Product Features and Performance
500V drain-source voltage
20A continuous drain current
250mΩ maximum on-resistance
1380pF maximum input capacitance
214W maximum power dissipation
150°C maximum junction temperature
Product Advantages
Excellent switching performance
High power density
Reliable and durable
Key Technical Parameters
Vds: 500V
Vgs (Max): ±30V
Rds On (Max) @ Id, Vgs: 250mΩ @ 10A, 10V
Id (Tc): 20A
Ciss (Max) @ Vds: 1380pF @ 25V
Power Dissipation (Max): 214W (Tc)
Quality and Safety Features
ROHS3 compliant
TO-247-3 package
Compatibility
Suitable for a wide range of power electronics applications
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial controls
Product Lifecycle
Current product, no discontinuation plans
Key Reasons to Choose This Product
High voltage and current capability
Low on-resistance for high efficiency
Compact TO-247-3 package
Reliable and durable performance
Suitable for a variety of power electronics applications
