Manufacturer Part Number
STW21NM60N
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET transistor with low on-resistance and fast switching capabilities.
Product Features and Performance
High drain-to-source voltage rating of 600V
Low on-resistance of 220mΩ
Fast switching with gate charge of 66nC
Continuous drain current of 17A at 25°C
Wide operating temperature range up to 150°C
Product Advantages
Excellent power efficiency due to low on-resistance
Reliable and robust design for high-power applications
Fast switching capabilities for high-frequency applications
Compact TO-247-3 package for easy integration
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Gate-to-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 220mΩ
Continuous Drain Current (Id): 17A
Input Capacitance (Ciss): 1900pF
Power Dissipation: 140W
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Suitable for a wide range of power electronics and motor control applications
Application Areas
Switched-mode power supplies
Motor drives
Industrial automation
Renewable energy systems
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacement parts and upgrades may be available
Key Reasons to Choose
Excellent power efficiency and low on-resistance
Fast switching capabilities for high-frequency applications
Reliable and robust design for high-power applications
Wide operating temperature range and high power dissipation
Compact and easy-to-integrate TO-247-3 package