Manufacturer Part Number
STW23N85K5
Manufacturer
STMicroelectronics
Introduction
High-voltage, high-power N-channel MOSFET transistor
Product Features and Performance
Drain to Source Voltage (Vdss) of 850V
On-state Resistance (Rds(on)) of 275mOhm
Continuous Drain Current (Id) of 19A at 25°C
Total Power Dissipation of 250W at 25°C
Product Advantages
Robust and reliable performance
Optimized for high-voltage, high-power applications
Excellent thermal management
Key Technical Parameters
Operating Temperature: 150°C (Tj)
Gate-Source Voltage (Vgs): ±30V
Input Capacitance (Ciss): 1650pF @ 100V
Gate Charge (Qg): 38nC @ 10V
Quality and Safety Features
RoHS3 compliant
Manufactured to high quality standards
Compatibility
Through-hole mounting in TO-247-3 package
Application Areas
Power supplies
Motor drives
Inverters
High-voltage switching circuits
Product Lifecycle
Current generation product
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Capable of handling high voltages and currents
Low on-state resistance for efficient power conversion
Robust thermal performance
Reliable and high-quality construction
Suitable for a wide range of high-power applications