Manufacturer Part Number
STW24N60M2
Manufacturer
STMicroelectronics
Introduction
The STW24N60M2 is a high-performance power MOSFET device suitable for a wide range of power conversion and control applications.
Product Features and Performance
600V drain-to-source voltage
Low on-resistance of 190mΩ at 9A, 10V
Continuous drain current of 18A at 25°C case temperature
High-speed switching capability
Low gate charge of 29nC at 10V
Product Advantages
Excellent power handling and efficiency
Fast switching for high-frequency operation
Robust and reliable performance
Compact TO-247 package
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Gate-to-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 190mΩ @ 9A, 10V
Continuous Drain Current (Id): 18A @ 25°C
Input Capacitance (Ciss): 1060pF @ 100V
Power Dissipation (Tc): 150W
Quality and Safety Features
Designed and manufactured to high quality standards
Robust construction for reliable operation
Meets safety and regulatory requirements
Compatibility
Suitable for a wide range of power conversion and control applications
Compatible with standard driver circuits and control systems
Application Areas
Switching power supplies
Motor drives
Inverters
Electric vehicle systems
Industrial automation and control
Product Lifecycle
Currently in active production
Replacement or upgrade options may be available in the future
Key Reasons to Choose This Product
High-performance power handling capability
Excellent efficiency and switching speed
Robust and reliable design
Versatile application range
Compatibility with standard control systems
STW24N60STMicroelectronics