Manufacturer Part Number
STW23NM50N
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET in a TO-247-3 package
Product Features and Performance
500V drain-source voltage
190mOhm maximum on-resistance
17A continuous drain current at 25°C
125W maximum power dissipation
Low gate charge and input capacitance
Suitable for high-frequency, high-voltage switching applications
Product Advantages
Excellent performance in high-voltage, high-current applications
Low on-resistance for high efficiency
Compact TO-247-3 package for space-saving design
Excellent reliability and ruggedness
Key Technical Parameters
Drain-Source Voltage (Vdss): 500V
Gate-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 190mOhm
Drain Current (Id): 17A
Power Dissipation (Tc): 125W
Input Capacitance (Ciss): 1330pF
Gate Charge (Qg): 45nC
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Suitable for use in various high-voltage, high-current switching applications such as:
Switch-mode power supplies
Motor drives
Induction heating
Welding equipment
Industrial automation and control systems
Application Areas
High-voltage, high-current switching applications
Power conversion and control systems
Industrial and consumer electronics
Product Lifecycle
The STW23NM50N is an active product and is not nearing discontinuation. Replacement or upgrade options are available from the manufacturer.
Key Reasons to Choose This Product
Excellent performance in high-voltage, high-current applications
Low on-resistance for high efficiency
Compact package for space-saving design
High reliability and ruggedness
Compatibility with a wide range of high-voltage, high-current applications
Availability of replacement and upgrade options from the manufacturer
