Manufacturer Part Number
STW21NM60ND
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET
Part of the FDmesh II series
Product Features and Performance
Drain-to-Source Voltage (Vdss): 600V
Continuous Drain Current (Id): 17A at 25°C
On-Resistance (Rds(on)): 220mΩ at 8.5A, 10V
Input Capacitance (Ciss): 1800pF at 50V
Power Dissipation (Tc): 140W
Gate Charge (Qg): 60nC at 10V
Operating Temperature: Up to 150°C
Product Advantages
Low on-resistance for high efficiency
High voltage rating for a wide range of applications
Robust design for reliable operation
Easy to drive with 10V gate voltage
Key Technical Parameters
N-channel MOSFET
TO-247-3 package
RoHS3 compliant
Quality and Safety Features
Designed to meet safety and reliability standards
Robust construction for long-term durability
Compatibility
Suitable for a variety of power electronics applications
Application Areas
Switching power supplies
Motor drives
Uninterruptible power supplies (UPS)
Industrial controls
Renewable energy systems
Product Lifecycle
Currently in production
Replacements and upgrades available
Key Reasons to Choose This Product
Excellent performance-to-cost ratio
Proven reliability and longevity
Compatibility with a wide range of power electronics applications
Easy integration into existing designs
Robust design for harsh environments