Manufacturer Part Number
STW21NM50N
Manufacturer
STMicroelectronics
Introduction
High-voltage, high-performance N-channel power MOSFET
Part of the MDmesh II series
Product Features and Performance
Operating temperature up to 150°C
Drain-source voltage up to 500V
Very low on-resistance down to 190mΩ
High current capability up to 18A
Low gate charge of 65nC
Fast switching speed
Product Advantages
Excellent power conversion efficiency
High reliability and ruggedness
Suitable for high-voltage, high-power applications
Key Technical Parameters
Drain-source voltage (Vdss): 500V
Gate-source voltage (Vgs): ±25V
On-resistance (Rds(on)): 190mΩ
Continuous drain current (Id): 18A
Input capacitance (Ciss): 1950pF
Power dissipation: 140W
Quality and Safety Features
RoHS3 compliant
TO-247-3 package for optimal thermal performance
Compatibility
Suitable for a wide range of high-voltage, high-power applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Industrial and medical equipment
Product Lifecycle
This product is currently in production and is not nearing discontinuation.
Replacement or upgrade options may be available from STMicroelectronics.
Key Reasons to Choose This Product
Excellent power efficiency and performance
High reliability and ruggedness
Suitable for demanding high-voltage, high-power applications
Wide operating temperature range up to 150°C
Compact and efficient TO-247-3 package