Manufacturer Part Number
STW20NM60
Manufacturer
STMicroelectronics
Introduction
The STW20NM60 is a discrete semiconductor product, specifically a single N-Channel MOSFET transistor.
Product Features and Performance
MOSFET (Metal Oxide Semiconductor Field Effect Transistor) technology
600V drain-to-source voltage
Maximum 20A continuous drain current at 25°C
Low on-resistance of 290mΩ at 10A, 10V
Input capacitance of 1500pF at 25V
Maximum power dissipation of 192W at Tc (case temperature)
Operating temperature range up to 150°C
Product Advantages
High voltage and current handling capability
Low on-resistance for efficient power switching
Compact TO-247-3 package for easy mounting
Suitable for a variety of power conversion and control applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 290mΩ @ 10A, 10V
Continuous Drain Current (Id): 20A @ 25°C
Input Capacitance (Ciss): 1500pF @ 25V
Power Dissipation (Pd): 192W @ Tc
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
TO-247-3 package and pinout
Application Areas
Power supplies
Motor drives
Inverters
Converters
Switching circuits
Product Lifecycle
Currently in active production
No known plans for discontinuation
Replacement parts or upgrades may be available
Key Reasons to Choose This Product
High voltage and current handling capability
Low on-resistance for efficient power switching
Compact and easy to mount TO-247-3 package
Wide operating temperature range
Designed and manufactured to high quality standards
Suitable for a variety of power conversion and control applications
STW21NM60STMicroelectronics