Manufacturer Part Number
STW20NB50
Manufacturer
STMicroelectronics
Introduction
High-voltage, high-current power MOSFET transistor
Product Features and Performance
500V drain-to-source voltage
20A continuous drain current
250mΩ maximum on-resistance
4700pF maximum input capacitance
110nC maximum gate charge
250W maximum power dissipation
150°C maximum junction temperature
Product Advantages
High voltage and current handling capability
Low on-resistance for efficient power conversion
Suitable for high-power applications
Key Technical Parameters
Vdss: 500V
Vgs(max): ±30V
Rds(on): 250mΩ @ 10A, 10V
Id(max): 20A @ 25°C
Ciss: 4700pF @ 25V
Pd(max): 250W @ Tc
Quality and Safety Features
RoHS non-compliant
TO-247-3 package for through-hole mounting
Compatibility
Suitable for high-power switching applications
Can be used in power supplies, motor drives, and other power electronics
Application Areas
High-power switching
Power conversion
Motor control
Industrial electronics
Product Lifecycle
This product is an established power MOSFET in the STMicroelectronics PowerMESH series
Replacement or upgraded models may be available in the future
Key Reasons to Choose This Product
High voltage and current handling capabilities
Low on-resistance for efficient power conversion
Suitable for high-power applications
Established product with reliable performance
TO-247-3 package provides robust mounting
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