Manufacturer Part Number
STW19NM60N
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET suitable for automotive and industrial applications
Product Features and Performance
600V drain-to-source voltage rating
Low on-resistance of 285mΩ @ 6.5A, 10V
Optimized for high-frequency and high-efficiency switching
High current capability of 13A continuous drain current
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent ruggedness and reliability for demanding applications
Efficient switching performance for high-frequency power conversion
Compact and thermally efficient TO-247-3 package
Key Technical Parameters
Drain-to-source voltage (Vdss): 600V
Maximum gate-to-source voltage (Vgs): ±25V
On-resistance (Rds(on)): 285mΩ @ 6.5A, 10V
Continuous drain current (Id): 13A @ 25°C
Input capacitance (Ciss): 1000pF @ 50V
Power dissipation (Ptot): 110W @ Tc
Quality and Safety Features
RoHS3 compliant
Automotive-qualified AEC-Q101 standard
Compatibility
Suitable for a wide range of automotive, industrial, and power conversion applications
Application Areas
Automotive systems (e.g., motor drives, power supplies)
Industrial power conversion (e.g., switch-mode power supplies, motor drives)
Renewable energy systems (e.g., solar inverters, wind inverters)
Product Lifecycle
Currently in production
Replacement or upgrade options available from STMicroelectronics
Key Reasons to Choose This Product
Excellent switching performance and efficiency for high-frequency power conversion
Robust and reliable design for demanding automotive and industrial applications
Compact and thermally efficient TO-247-3 package
Wide operating temperature range and automotive-qualified for versatile use
Availability of replacement and upgrade options from the manufacturer