Manufacturer Part Number
STW18N65M5
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET
Part of the MDmesh V series
Product Features and Performance
Drain-to-Source Voltage (Vdss): 650V
Maximum Gate-to-Source Voltage (Vgs): ±25V
On-State Resistance (Rds(on)): 220mΩ @ 7.5A, 10V
Continuous Drain Current (Id): 15A @ 25°C (Tc)
Input Capacitance (Ciss): 1240pF @ 100V
Power Dissipation (Tc): 110W
Product Advantages
Excellent performance in high-voltage, high-power applications
Low on-state resistance for low conduction losses
Robust design for reliable operation
Key Technical Parameters
MOSFET Technology: N-Channel
Threshold Voltage (Vgs(th)): 5V @ 250A
Gate Charge (Qg): 31nC @ 10V
Operating Temperature: -55°C to 150°C (Tj)
Quality and Safety Features
RoHS3 compliant
TO-247-3 package for optimal thermal performance
Compatibility
Suitable for a wide range of high-voltage, high-power applications
Application Areas
Switching power supplies
Motor drives
Industrial and home appliances
Renewable energy systems
Product Lifecycle
This product is currently in active production
Replacements and upgrades may be available from STMicroelectronics
Key Reasons to Choose This Product
Excellent performance and efficiency in high-voltage, high-power applications
Robust and reliable design for long-lasting operation
Wide operating temperature range
RoHS3 compliance for environmental responsibility
Compatibility with a variety of high-power applications
