Manufacturer Part Number
STW19NM50N
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel MOSFET with low on-resistance and high voltage capability
Product Features and Performance
Low on-resistance for low power loss
High voltage handling capability up to 500V
High current capability up to 14A
Fast switching with low gate charge
Optimized for high-efficiency power conversion applications
Product Advantages
Excellent power efficiency
Reliable high-voltage operation
Compact and robust design
Suitable for a wide range of power electronics applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 500V
Gate-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 250mΩ @ 7A, 10V
Continuous Drain Current (Id): 14A @ 25°C
Input Capacitance (Ciss): 1000pF @ 50V
Power Dissipation (Ptot): 110W @ Tc
Quality and Safety Features
ROHS3 compliant
Robust TO-247-3 package
Designed for high reliability and safety
Compatibility
Suitable for a wide range of power electronics applications, including:
- Switching power supplies
- Motor drives
- Inverters
- Power factor correction circuits
Application Areas
High-efficiency power conversion
Industrial and consumer electronics
Renewable energy systems
Automotive electronics
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacement or upgrade options may be available from STMicroelectronics
Key Reasons to Choose This Product
Excellent power efficiency and low power loss
High voltage and current handling capability
Fast switching performance for high-frequency applications
Robust and reliable design for long-term operation
Compatibility with a wide range of power electronics applications