Manufacturer Part Number
STW24N60DM2
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET in a TO-247-3 package
Part of the FDmesh II Plus series
Product Features and Performance
Optimized for high-efficiency and high-power density applications
Low on-resistance (Rds(on)) of 200 mΩ at 9 A, 10 V
High drain-source voltage of 600 V
Wide operating temperature range of -55°C to 150°C
Fast switching speed and low gate charge of 29 nC at 10 V
Product Advantages
Excellent thermal and electrical performance
Robust and reliable design
Suitable for a wide range of high-power applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 600 V
Gate-Source Voltage (Vgs): ±25 V
Continuous Drain Current (Id) at 25°C: 18 A
Input Capacitance (Ciss): 1055 pF at 100 V
Power Dissipation (Tc): 150 W
Quality and Safety Features
RoHS3 compliant
Robust TO-247-3 package design
Compatibility
Suitable for a wide range of power electronics applications, such as power supplies, motor drives, and inverters
Application Areas
High-efficiency and high-power density power electronics
Industrial, automotive, and renewable energy applications
Product Lifecycle
Currently in production
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Excellent electrical and thermal performance
Robust and reliable design
Suitable for a wide range of high-power applications
RoHS3 compliance for environmental sustainability
STW24N60STMicroelectronics