Manufacturer Part Number
STW25N80K5
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET
Product Features and Performance
800V drain-source voltage rating
Low on-resistance of 260mΩ @ 19.5A, 10V
High continuous drain current of 19.5A @ 25°C
Wide operating temperature range of -55°C to 150°C
Fast switching with low gate charge of 40nC @ 10V
Product Advantages
Excellent power efficiency and low heat generation
Robust and reliable performance
Suitable for high-voltage, high-current applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 800V
Maximum Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 260mΩ @ 19.5A, 10V
Continuous Drain Current (Id): 19.5A @ 25°C
Input Capacitance (Ciss): 1600pF @ 100V
Power Dissipation (Tc): 250W
Quality and Safety Features
ROHS3 compliant
Designed for reliable and safe operation
Compatibility
TO-247-3 package
Compatible with various high-voltage, high-current applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Welding equipment
Industrial automation and control
Product Lifecycle
Current production model
Replacement and upgrade options available
Key Reasons to Choose This Product
Excellent power efficiency and low heat generation
Robust and reliable performance in high-voltage, high-current applications
Wide operating temperature range for versatile use
Fast switching capabilities for efficient power conversion
ROHS3 compliance for environmental responsibility
STW25NM60STMicroelectronics