Manufacturer Part Number
STW26N60M2
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET
Product Features and Performance
Optimized for high-efficiency power conversion applications
Low on-resistance for low conduction losses
Fast switching for reduced switching losses
High breakdown voltage for operation in high-voltage environments
Low gate charge for efficient gate driving
Avalanche rated for rugged and reliable operation
Product Advantages
Excellent efficiency
High power density
Robust design
Key Technical Parameters
Drain to Source Voltage (Vdss): 600 V
Maximum Gate-Source Voltage (Vgs): ±25 V
On-Resistance (Rds(on)): 165 mΩ @ 10 A, 10 V
Continuous Drain Current (Id): 20 A @ 25°C
Quality and Safety Features
RoHS3 compliant
Qualified for industrial and automotive applications
Compatibility
Suitable for a wide range of power conversion applications, including switch-mode power supplies, motor drives, and inverters
Application Areas
Power conversion
Motor control
Inverters
Switch-mode power supplies
Product Lifecycle
This product is an active and widely used device in the industry.
Replacement or upgrade options are available from STMicroelectronics and other manufacturers.
Key Reasons to Choose This Product
High efficiency and low losses
Robust design for reliable operation
Wide operating temperature range (-55°C to 150°C)
Optimized for high-voltage and high-current applications
Suitable for a variety of power conversion and motor control applications
STW27NM60NDSTMicroelectronics