Manufacturer Part Number
STW28N60DM2
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET in the MDmesh DM2 series
Product Features and Performance
High breakdown voltage of 600V
Low on-state resistance of 160mOhm
Continuous drain current of 21A at 25°C
Operating temperature range of -55°C to 150°C
Input capacitance of 1500pF at 100V
Product Advantages
Excellent switching performance
High power density
Reliable and robust design
Suitable for high-voltage, high-power applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Gate-to-Source Voltage (Vgs): ±25V
On-State Resistance (Rds(on)): 160mOhm @ 10.5A, 10V
Continuous Drain Current (Id): 21A @ 25°C
Input Capacitance (Ciss): 1500pF @ 100V
Power Dissipation: 170W @ 25°C
Quality and Safety Features
RoHS3 compliant
Suitable for high-voltage, high-power applications
Compatibility
Through-hole mounting in TO-247-3 package
Application Areas
Power supplies
Motor drives
Inverters
Switching converters
Product Lifecycle
Currently available
No information on discontinuation or replacements
Key Reasons to Choose This Product
High breakdown voltage and low on-state resistance for efficient power conversion
Reliable and robust design for demanding applications
Excellent switching performance for high-frequency operation
Wide operating temperature range for versatile use